40N60A4D Datasheet, Hgt1n40n60a4d, Fairchild Semiconductor

40N60A4D Features

• Hgt1n40n60a4d of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state volta

PDF File Details

Part number:

40N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

176.42kb

Download:

📄 Datasheet

Description:

Hgt1n40n60a4d.

40N60A4D Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

TAGS

40N60A4D

Fairchild Semiconductor

📁 Related Datasheet

40N60 - IXSH40N60 (IXYS Corporation)
VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi.

40N60 - IGBT (ON Semiconductor)
NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per.

40N60 - 40A Field Stop IGBT (Fairchild Semiconductor)
FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo.

40N60FL - IGBT (ON Semiconductor)
NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per.

40N60M2 - N-Channel MOSFET (STMicroelectronics)
STWA40N60M2 Datasheet N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package D(2, TAB) G(1) Features Order code ST.

40N60NPFD - 600V FIELD STOP IGBT (Silan)
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.

40N60NPFDPN - 600V FIELD STOP IGBT (Silan)
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.

40N03 - N-Channel Enhancement Mode PowerMos FET (SeCoS)
SID40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID40N03 pr.

40N03GP - N-channel Enhancement-mode Power MOSFET (Advanced Power Electronics)
Advanced Power Electronics Corp. AP40N03GP RoHS-pliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requireme.

40N03P - SSM40N03P (Silicon Standard)
SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDSS R DS(ON) ID TO-220 30V 17mΩ 4.