* of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicati
40N60A4D Datasheet (176.42 KB)
40N60A4D
Fairchild Semiconductor
176.42 KB
Hgt1n40n60a4d.
HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high volt.
📁 Related Datasheet
40N60 IXSH40N60 (IXYS Corporation)
40N60 IGBT (ON Semiconductor)
40N60 40A Field Stop IGBT (Fairchild Semiconductor)
40N60FL IGBT (ON Semiconductor)
40N60M2 N-Channel MOSFET (STMicroelectronics)
40N60NPFD 600V FIELD STOP IGBT (Silan)
40N60NPFDPN 600V FIELD STOP IGBT (Silan)
40N03 N-Channel Enhancement Mode PowerMos FET (SeCoS)
40N03GP N-channel Enhancement-mode Power MOSFET (Advanced Power Electronics)
40N03P SSM40N03P (Silicon Standard)
