40N25 Datasheet, Fqa40n25, Fairchild Semiconductor

40N25 Features

  • Fqa40n25
  • 40 A, 250 V, RDS(on) = 70 mΩ (Max.) @ VGS = 10 V, ID = 20 A
  • Low Gate Charge ( Typ. 85nC)
  • Low Crss ( Typ. 70pF)
  • 100% Avalanche Tested D G G D S

PDF File Details

Part number:

40N25

Manufacturer:

Fairchild Semiconductor

File Size:

1.47MB

Download:

📄 Datasheet

Description:

Fqa40n25. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

Datasheet Preview: 40N25 📥 Download PDF (1.47MB)
Page 2 of 40N25 Page 3 of 40N25

TAGS

40N25
FQA40N25
Fairchild Semiconductor

📁 Related Datasheet

40N20 - N-Channel MOSFET Transistor (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N20 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge.

40N25 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 40N25 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltag.

40N03 - N-Channel Enhancement Mode PowerMos FET (SeCoS)
SID40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID40N03 pr.

40N03GP - N-channel Enhancement-mode Power MOSFET (Advanced Power Electronics)
Advanced Power Electronics Corp. AP40N03GP RoHS-pliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requireme.

40N03P - SSM40N03P (Silicon Standard)
SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDSS R DS(ON) ID TO-220 30V 17mΩ 4.

40N05 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance :.

40N06 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :.

40N06 - DTU40N06 (Din-Tek)
N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 .din-tek.jp DTU40N06 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Pow.

40N10 - N-Channel MOSFET (VBsemi)
40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = .

40N10 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

Stock and price

IXYS Corporation
IGBT 2500V 70A ISOPLUSI5-PAK
DigiKey
IXYL40N250CV1
157 In Stock
Qty : 25 units
Unit Price : $51.45
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts