40N10B
CHONGQING PINGYANG
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N-channel mosfet.
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40N10 - N-Channel MOSFET
(VBsemi)
40N10-VB TO252
40N10-VB TO252 Datasheet
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.030 at VGS = .
40N10 - N-CHANNEL MOSFET
(CHONGQING PINGYANG)
40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av.
40N10 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
40N10
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Stat.
40N10 - DTU40N10
(DinTek)
.din-tek.jp
DT81
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 .
40N10F - N-CHANNEL MOSFET
(CHONGQING PINGYANG)
40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av.
40N10F7 - N-channel Power MOSFET
(STMicroelectronics)
STL40N10F7
N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal s.
40N10H - N-CHANNEL MOSFET
(CHONGQING PINGYANG)
40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% av.
40N120 - IXEH40N120
(IXYS Corporation)
IGBT with Reverse Blocking capability
IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G
G
C E
C (TAB)
E
G = Gate,
C.
40N120 - IGBT
(ON Semiconductor)
NGTB40N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.
40N120FL2 - IGBT
(ON Semiconductor)
NGTB40N120FL2WAG
IGBT - Field Stop II / 4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Tren.
