40N120IHL Datasheet, Igbt, ON Semiconductor

40N120IHL Features

• Igbt a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on
• state voltage and mi

PDF File Details

Part number:

40N120IHL

Manufacturer:

ON Semiconductor ↗

File Size:

242.98kb

Download:

📄 Datasheet

Description:

Igbt.

40N120IHL Application

• Applications offering both low on
• state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applicat

TAGS

40N120IHL

ON Semiconductor

📁 Related Datasheet

40N120 - IXEH40N120 (IXYS Corporation)
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C.

40N120 - IGBT (ON Semiconductor)
NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.

40N120FL2 - IGBT (ON Semiconductor)
NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Tren.

40N10 - N-Channel MOSFET (VBsemi)
40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = .

40N10 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

40N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stat.

40N10 - DTU40N10 (DinTek)
.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 .

40N10B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

40N10F - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

40N10F7 - N-channel Power MOSFET (STMicroelectronics)
STL40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal s.