Datasheet4U Logo Datasheet4U.com

40N10F7

N-channel Power MOSFET

40N10F7 Features

* Order code STL40N10F7 VDS 100 V RDS(on) max. 0.024Ω ID 10 A PTOT 5W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching applications Description This N-channel

40N10F7 General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL40N10F7 Table 1: Device summary Marking .

40N10F7 Datasheet (1.12 MB)

Preview of 40N10F7 PDF

Datasheet Details

Part number:

40N10F7

Manufacturer:

STMicroelectronics ↗

File Size:

1.12 MB

Description:

N-channel power mosfet.
STL40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal s.

📁 Related Datasheet

40N10F - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

40N10 - N-Channel MOSFET (VBsemi)
40N10-VB TO252 40N10-VB TO252 Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = .

40N10 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

40N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Stat.

40N10 - DTU40N10 (DinTek)
.din-tek.jp DT81 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 .

40N10B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

40N10H - N-CHANNEL MOSFET (CHONGQING PINGYANG)
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av.

40N120 - IXEH40N120 (IXYS Corporation)
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C.

TAGS

40N10F7 N-channel Power MOSFET STMicroelectronics

Image Gallery

40N10F7 Datasheet Preview Page 2 40N10F7 Datasheet Preview Page 3

40N10F7 Distributor