Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
25V).
Power management
Load switch
Battery protection
Features
- 8.8 A,.
- 30 V
RDS(ON) = 20 mΩ @ VGS =.
- 10 V RDS(ON) = 35 mΩ @ VGS =.
- 4.5 V.
- Low gate charge (17nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability
DD DD DD DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS V GSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain.
4435-FairchildSemiconductor.pdf
