Description
This P-Channel MOSFET is produced
®
using
Fairchild
Semiconductor’s advanced PowerTrench
process that has
been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate
Features
- Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A.
- Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A.
- Extended VGSS range (-25V) for battery.
4435BZ_FairchildSemiconductor.pdf
