4435BZ - FDS4435BZ
This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Batte
4435BZ Features
* Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
* Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
* Extended VGSS range (-25V) for battery applications
* HBM ESD protection level of ±3.8KV typical (note 3)
* High performance trench technology for extremely low rD
