4435BZ Datasheet - Fairchild Semiconductor

4435BZ FDS4435BZ

This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Batte.

4435BZ Features

* Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A

* Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A

* Extended VGSS range (-25V) for battery applications

* HBM ESD protection level of ±3.8KV typical (note 3)

* High performance trench technology for extremely low rD

4435BZ_FairchildSemiconductor.pdf