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4435BZ Datasheet - Fairchild Semiconductor

4435BZ - FDS4435BZ

This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Batte

4435BZ Features

* Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A

* Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A

* Extended VGSS range (-25V) for battery applications

* HBM ESD protection level of ±3.8KV typical (note 3)

* High performance trench technology for extremely low rD

4435BZ_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

4435BZ

Manufacturer:

Fairchild Semiconductor

File Size:

372.15 KB

Description:

fds4435bz.

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