60N100D - FGL60N100D

Name: 60N100D
SKU: 60N100D-718106

Fairchild Semiconductor

📥 Download Datasheet

60N100D Datasheet Preview — Preview of 60N100D PDF

Datasheet Details

Part number	60N100D
Manufacturer	Fairchild Semiconductor
File Size	498.44 KB
Description	FGL60N100D
Datasheet	60N100D_FairchildSemiconductor.pdf

60N100D Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity.

Features

High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode.

📁 60N100D Similar Datasheet

60N10 - N-Channel MOSFET Transistor (Inchange Semiconductor)
60N03 - Power MOSFET (Tuofeng Semiconductor)
60N035 - N-Channel Field Effect Transistor (ETC)
60N03GP - AP60N03GP (Advanced Power Electronics)
60N03L-10 - N-CHANNEL Power MOSFET (STMicroelectronics)
60N03S - AP60N03S (Advanced Power Electronics)
60N05 - N-CHANNEL POWER MOSFET (UTC)
60N05-16 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Fairchild Semiconductor

Published: Apr 26, 2012 |