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60N035 - N-Channel Field Effect Transistor

Description

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to trans

Features

  • Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.015 Ω ID = 60A Ordering Information Device 60N035T 60N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current Continues Pulsed Drain-Source Voltage Gate S.

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Datasheet Details

Part number 60N035
Manufacturer ETC
File Size 34.15 KB
Description N-Channel Field Effect Transistor
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Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance Information Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts Features • • • Critical DC Electrical parameters specified at elevated Temp.
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