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BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE

BAV23S Description

DISCRETE POWER AND SIGNAL TECHNOLOGIES BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE PD ....350 mW @ TA = 25 Deg C BV ....250 V (MIN) @ IR = 100 uA.

BAV23S Applications

* involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 degrees C and junction-to-ambient thermal resistance of 357 degrees C per Watt. (Derating factor of 2.8 milliwatts per degree C) DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.019 (0.483) 0.015 (0.

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Datasheet Details

Part number
BAV23S
Manufacturer
Fairchild Semiconductor
File Size
40.79 KB
Datasheet
BAV23S_FairchildSemiconductor.pdf
Description
HIGH VOLTAGE GENERAL PURPOSE DIODE

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HIGH VOLTAGE GENERAL PURPOSE DIODE Fairchild Semiconductor
Fairchild Semiconductor BAV23S-like datasheet