Datasheet Specifications
- Part number
- BAV23S
- Manufacturer
- Fairchild Semiconductor
- File Size
- 40.79 KB
- Datasheet
- BAV23S_FairchildSemiconductor.pdf
- Description
- HIGH VOLTAGE GENERAL PURPOSE DIODE
Description
DISCRETE POWER AND SIGNAL TECHNOLOGIES BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE PD ....350 mW @ TA = 25 Deg C BV ....250 V (MIN) @ IR = 100 uA.
Applications
* involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 degrees C and junction-to-ambient thermal resistance of 357 degrees C per Watt. (Derating factor of 2.8 milliwatts per degree C) DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.019 (0.483) 0.015 (0.BAV23S Distributors
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