BAV23S Datasheet (Fairchild Semiconductor) - HIGH VOLTAGE GENERAL PURPOSE DIODE

BAV23S, HIGH VOLTAGE GENERAL PURPOSE DIODE

DISCRETE POWER AND SIGNAL TECHNOLOGIES BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE PD .

.350 mW @ TA = 25 Deg C BV .

.250 V (MIN) @ IR = 100 uA TRR .

50 nS @ IF=IR = 30 mA IRR = 3.0 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C Derating Factor per Degree C VOLTAGES & CURRENTS VRRM Repetitive Peak Reverse Voltage (Single Device) VRRM Repetitive Peak Reverse V