BDX53 - NPN Epitaxial Silicon Transistor
BDX53 Features
* Power Darlington TR
* Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C 1 TO-220 1.Base 2.Collector 3.Emitter B R1 R1 ≅ 8.4kΩ R2 ≅ 0.3kΩ R2 E Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Volta
