BDX53C - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
3 2 1 TO-220 Figure 1.
Internal schematic diagram Table 1.
Device summary Order code BDX53B BDX53C BDX54B BDX54C Marking BDX53B BDX53C BDX54B BDX54C R1 typ.= 10 kΩ R2 typ.= 150 Ω Package TO-
