F12N10L Datasheet - Fairchild Semiconductor

F12N10L N-Channel Logic Level Power MOSFET

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating tr.

F12N10L Features

* 12A, 100V

* rDS(ON) = 0.200Ω

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

F12N10L-FairchildSemiconductor.pdf

F12N10L Datasheet Preview — Preview of F12N10L PDF

Datasheet Details

Part number:

F12N10L

Manufacturer:

Fairchild Semiconductor

File Size:

414.31 KB

Description:

N-channel logic level power mosfet.

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F12N10L F12N10L N-Channel Logic Level Power MOSFET Fairchild Semiconductor

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