F12N10L Datasheet, Mosfet, Fairchild Semiconductor

F12N10L Features

• Mosfet
• 12A, 100V
• rDS(ON) = 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Au

PDF File Details

Part number:

F12N10L

Manufacturer:

Fairchild Semiconductor

File Size:

414.31kb

Download:

📄 Datasheet

Description:

N-channel logic level power mosfet.

F12N10L Application

• Applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate ox

TAGS

F12N10L

Fairchild Semiconductor

📁 Related Datasheet

F12N100 - N-Channel MOSFET (Solitron Devices)
.DataSheet.co.kr Datasheet pdf - http://..net/ .

F12N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQPF12N60C — N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mod.

F12N65 - 650V N-CHANNEL MOSFET (Pan Jit International)
PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A TO-220AB / ITO-220AB TO-220AB • Low.

F12NM50N - N-channel Power MOSFET (STMicroelectronics)
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP.

F12-25R12KT4G - IGBT (Infineon)
Technische Information / Technical Information IGBT-Module IGBT-modules F12-25R12KT4G EconoPACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Cont.

F1200A - Fast Efficient Rectifier Diodes (Diotec)
F1200A F1200G F1200A F1200G Fast Efficient Rectifier Diodes Schnelle Gleichrichterdioden für hohen Wirkungsgrad IFAV = 12 A VF1 < 0.82 V Tjm.

F1200A - High efficiency fast silicion rectifier diode (Semikron)
F 1200A F 1200G Axial leaded diode .3 5 -7 5 -@ 5 -2 5 -A <  =  4  =  =  , 1,  4  =  =  , #<< # ( .

F1200A - FAST RECOVERY RECTIFIER DIODES (EIC)
Certificate TH97/10561QM Certificate TW00/17276EM F1200A, F1200D FAST RECOVERY RECTIFIER DIODES PRV : 50 - 200 Volts Io : 12 Amperes D6 FEATURES.

F1200B - Fast Efficient Rectifier Diodes (Diotec)
F1200A F1200G F1200A F1200G Fast Efficient Rectifier Diodes Schnelle Gleichrichterdioden für hohen Wirkungsgrad IFAV = 12 A VF1 < 0.82 V Tjm.

F1200B - High efficiency fast silicion rectifier diode (Semikron)
F 1200A F 1200G Axial leaded diode .3 5 -7 5 -@ 5 -2 5 -A <  =  4  =  =  , 1,  4  =  =  , #<< # ( .