F12NM50N - N-channel Power MOSFET
ucThis series of devices is realized with the second dgeneration of MDmesh™ technology.
This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most Obso
F12NM50N Features
* Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P
* 100% avalanche tested te
* Low input capacitance and gate charge le
* Low gate input r
