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F12N60C 600V N-Channel MOSFET

F12N60C Description

FQPF12N60C * N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

F12N60C Features

* 12 A, 600 V, RDS(on) = 650 mΩ (Max. ) @ VGS = 10 V, ID = 6 A
* Low Gate Charge (Typ. 48 nC)
* Low Crss (Typ. 21 pF)
* 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source

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600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor F12N60C-like datasheet