F12N60C - 600V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
F12N60C Features
* 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
* Low Gate Charge (Typ. 48 nC)
* Low Crss (Typ. 21 pF)
* 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source
