FCA22N60N Datasheet, Mosfet, Fairchild Semiconductor

FCA22N60N Features

• Mosfet
• BVDSS > 650 V @ TJ = 150oC
• RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A
• Ultra Low Gate Charge (Typ. Qg = 45 nC)
• Low Effective Output Capacitan

PDF File Details

Part number:

FCA22N60N

Manufacturer:

Fairchild Semiconductor

File Size:

1.39MB

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📄 Datasheet

Description:

N-channel mosfet. The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep tre

FCA22N60N Application

• Applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN S MOSFET Maximum

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FCA22N60N

Fairchild Semiconductor

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