FCA22N60N Datasheet - Fairchild Semiconductor

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FCA22N60N N-Channel MOSFET

FCA22N60N * N-Channel SupreMOS® MOSFET FCA22N60N N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ May 2014 .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

FCA22N60N_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FCA22N60N

Manufacturer:

Fairchild Semiconductor

File Size:

1.39 MB

Description:

N-Channel MOSFET

Features

* BVDSS > 650 V @ TJ = 150oC
* RDS(on) = 140 mΩ (Typ. ) @ VGS = 10 V, ID = 11 A
* Ultra Low Gate Charge (Typ. Qg = 45 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Dra

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FCA22N60N N-Channel MOSFET Fairchild Semiconductor

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