FCA22N60N - N-Channel MOSFET

Fairchild Semiconductor

FCA22N60N Datasheet Preview — Preview of FCA22N60N PDF

Datasheet Details

Part number	FCA22N60N
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.39 MB
Description	N-Channel MOSFET
Datasheet	FCA22N60N_FairchildSemiconductor.pdf

FCA22N60N Product details

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

BVDSS > 650 V @ TJ = 150oC.
RDS(on) = 140 mΩ (Typ. ) @ VGS = 10 V, ID = 11 A.
Ultra Low Gate Charge (Typ. Qg = 45 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF).
100% Avalanche Tested.
RoHS Compliant.

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Published: Oct 2, 2009 |