FCA22N60N

N-Channel MOSFET

Fairchild Semiconductor

FCA22N60N Features

* BVDSS > 650 V @ TJ = 150oC

* RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A

* Ultra Low Gate Charge (Typ. Qg = 45 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* PDP

FCA22N60N General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCA22N60N Datasheet (1.39 MB)

FCA22N60N Datasheet Preview — Preview of FCA22N60N PDF

Datasheet Details

Part number:

FCA22N60N

Manufacturer:

Fairchild Semiconductor

File Size:

1.39 MB

Description:

N-channel mosfet.

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FCA22N60N N-Channel MOSFET Fairchild Semiconductor

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FCA22N60N Features

FCA22N60N General Description

Datasheet Details

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