FCB36N60N Datasheet, Mosfet, Fairchild Semiconductor

FCB36N60N Features

• Mosfet
• RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
• Ultra low gate charge (Typ. Qg = 86 nC)
• Low effective output capacitance (Typ. Coss.eff = 361 pF)
• 1

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Part number:

FCB36N60N

Manufacturer:

Fairchild Semiconductor

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205.76kb

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📄 Datasheet

Description:

N-channel mosfet. The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep tre

FCB36N60N Application

• Applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications
• Solar Inverter

TAGS

FCB36N60N

Fairchild Semiconductor

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