* BVDSS > 650 V @ TJ = 150oC
* RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A
* Ultra Low Gate Charge (Typ. Qg = 45 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)
* 100% Avalanche Tested
* RoHS Compliant Application
* LCD/
FCP22N60N Datasheet (649.33 KB)
FCP22N60N
Fairchild Semiconductor
649.33 KB
N-channel mosfet.
FCP22N60N / FCPF22N60NT
* N-Channel SupreMOS® MOSFET
FCP22N60N / FCPF22N60NT
N-Channel SupreMOS® MOSFET
600 V, 22 A, 165 mΩ
November 2013
F.
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