FCPF11N60NT, FCP11N60N Datasheet - Fairchild Semiconductor

FCPF11N60NT, FCP11N60N, N-Channel MOSFET

FCP11N60N / FCPF11N60NT * N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ November 2013

Features

* RDS(on) = 255 mΩ (Typ.
) @ VGS = 10 V, ID = 5.4 A
* Ultra Low Gate Charge (Typ.
Qg = 27.4 nC)
* Low Effective Output Capacitance (Typ.
Coss(eff.
) = 130 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain

FCP11N60N-FairchildSemiconductor.pdf