Datasheet4U Logo Datasheet4U.com

FCPF11N60NT - N-Channel MOSFET

This page provides the datasheet information for the FCPF11N60NT, a member of the FCP11N60N N-Channel MOSFET family.

Datasheet Summary

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • RDS(on) = 255 mΩ (Typ. ) @ VGS = 10 V, ID = 5.4 A.
  • Ultra Low Gate Charge (Typ. Qg = 27.4 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 130 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FCPF11N60NT

Datasheet Details

Part number FCPF11N60NT
Manufacturer Fairchild Semiconductor
File Size 640.50 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF11N60NT Datasheet
Additional preview pages of the FCPF11N60NT datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ November 2013 Features • RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A • Ultra Low Gate Charge (Typ. Qg = 27.4 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
Published: |