FCPF11N60NT
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
Key Features
- RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
- Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)
- 100% Avalanche Tested
