Datasheet4U Logo Datasheet4U.com

FCPF11N60T - SuperFET

Datasheet Summary

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance.

Features

  • 650V @ Tj = 150°C Typ. Rds(on) = 0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss. eff = 95pF) 100% avalanche tested RoHS Compliant D {.
  • ◀ G D S TO-220AB FCP Series G{ GD S ▲.
  • TO-220F FCPF Series { S Absolute Maximum Ratings Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current TC = 25°C unless otherwise noted Parameter - Continuous (TC = 25°C) -.

📥 Download Datasheet

Datasheet preview – FCPF11N60T

Datasheet Details

Part number FCPF11N60T
Manufacturer Fairchild Semiconductor
File Size 434.29 KB
Description SuperFET
Datasheet download datasheet FCPF11N60T Datasheet
Additional preview pages of the FCPF11N60T datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCP11N60 / FCPF11N60 / FCPF11N60T SuperFET TM FCP11N60 / FCPF11N60 / FCPF11N60T General Description SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. November 2009 Features • • • • • • 650V @ Tj = 150°C Typ. Rds(on) = 0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.
Published: |