FCPF220N80 Datasheet - Fairchild Semiconductor

MOSFET

FCPF220N80 Features

* Typ. RDS(on) = 188 m

* Ultra Low Gate Charge (Typ. Qg = 78 nC)

* Low Eoss (Typ. 7.5 uJ @ 400 V)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)

* 100% Avalanche Tested

* RoHS Compliant

* ESD Improved Capability Applications

FCPF220N80 General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCPF220N80 Datasheet (664.68 KB)

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FCPF220N80

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Fairchild Semiconductor

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664.68 KB

Description:

Mosfet.

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FCPF220N80 MOSFET Fairchild Semiconductor

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FCPF220N80 Features

FCPF220N80 General Description

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