FCPF22N60NT Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FCPF22N60NT Features

* BVDSS > 650 V @ TJ = 150oC

* RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A

* Ultra Low Gate Charge (Typ. Qg = 45 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* LCD/

FCPF22N60NT General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCPF22N60NT Datasheet (649.33 KB)

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FCPF22N60NT

Manufacturer:

Fairchild Semiconductor

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649.33 KB

Description:

N-channel mosfet.
FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 F.

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FCPF22N60NT N-Channel MOSFET Fairchild Semiconductor

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FCPF22N60NT Features

FCPF22N60NT General Description

Datasheet Details

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