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FCPF290N80 — N-Channel SuperFET® II MOSFET
FCPF290N80
N-Channel SuperFET® II MOSFET
800 V, 17 A, 290 m
May 2015
Features
• Typ. RDS(on) = 0.245 • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Eoss (Typ. 5.6 uJ @ 400 V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability
Applications
• AC-DC Power Supply • LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.