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FDB045AN08A0 - N-Channel MOSFET

Features

  • r DS(ON) = 3.9mΩ (Typ. ), V GS = 10V, ID = 80A.
  • Qg(tot) = 92nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82684.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB045AN08A0 April 2002 FDB045AN08A0 N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.5mΩ Features • r DS(ON) = 3.9mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.
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