FDB045AN08A0
Features
- r DS(ON) = 3.9mΩ (Typ.), V GS = 10V, ID = 80A
- Qg(tot) = 92n C (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
Formerly developmental type 82684
Applications
- 42V Automotive Load Control
- Starter / Alternator Systems
- Electronic Power Steering Systems
- Electronic Valve Train Systems
- DC-DC converters and Off-line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V systems
GATE
SOURCE TO-263AB FDB SERIES DRAIN (FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 145o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with Rθ JA = 43o C/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 80 19 Figure 4 600 310 2.0 -55 to 175 A A A m J W W/o C...
