FDB6035L - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDB6035L
Manufacturer	Fairchild Semiconductor
File Size	413.49 KB
Description	N-Channel MOSFET
Datasheet	FDB6035L Datasheet
Additional preview pages of the FDB6035L datasheet.

Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

58 A, 30 V. RDS(ON) = 0.011 Ω @ VGS=10 V RDS(ON) = 0.019 Ω @ VGS=4.5 V. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T C = 25°C unless otherwise noted FDP6035L 30 ±20 58 175 75 0.5 -65 to 175 FDB6035L Units V V A Maximum Power Diss.

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Published: Mar 30, 2005 |