FDB6035L N-Channel MOSFET

Fairchild Semiconductor

Description

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: FDB6035L
Manufacturer: Fairchild Semiconductor
File Size: 413.49 KB
Datasheet: FDB6035L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 58 A, 30 V. RDS(ON) = 0.011 Ω @ VGS=10 V RDS(ON) = 0.019 Ω @ VGS=4.5 V. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parame

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FDB6035L N-Channel MOSFET Fairchild Semiconductor

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