Datasheet Summary
FDD3672_F085 N-Channel UltraFET Trench MOSFET
March 2011
N-Channel UltraFET Trench MOSFET
100V, 44A, 28mΩ
Features
- Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A
- Typ Qg(10) = 24nC at VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
- RoHS pliant
Applications
- DC/DC converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
FDD3672_F085 Rev. C
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FDD3672_F085 N-Channel UltraFET Trench MOSFET
MOSFET Maximum Ratings TC = 25°C unless...