FDD3682 Datasheet | Fairchild Semiconductor

Features - r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A - Qg(tot) = 18.5n C (Typ.), VGS = 10V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Formerly developmental type 82755 March 2015 Applications - DC/DC converters and Off-Line UPS - Distributed Power Architectures and VRMs - Primary Switch for 24V and 48V Systems - High Voltage Synchronous Rectifier - Direct Injection / Diesel Injection System - 42V Automotive Load Control - Electronic Valve Train System DRAIN (FLANGE) GATE G SOURCE TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) Continuous (TC = 100o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, RθJA = 52o C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 100 ±20 32 23 5.5 Figure 4 55 95...