FDD6680A
Description
This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.0130 Ω @ VGS = 4.5 V
- Low gate charge ( 23nC typical )
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
Applications
- DC/DC converter Motor drives
