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FDD6N20 - MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A.
  • Low gate charge ( Typ. 4.7nC ).
  • Low Crss ( Typ. 6.3pF ).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant May 2007 UniFETTM tm.

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Datasheet preview – FDD6N20

Datasheet Details

Part number FDD6N20
Manufacturer Fairchild Semiconductor
File Size 311.40 KB
Description MOSFET
Datasheet download datasheet FDD6N20 Datasheet
Additional preview pages of the FDD6N20 datasheet.

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Full PDF Text Transcription

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FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.8Ω Features • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A • Low gate charge ( Typ. 4.7nC ) • Low Crss ( Typ. 6.3pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant May 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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