FDD6N20

MOSFET

Fairchild Semiconductor

FDD6N20 Features

* RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A

* Low gate charge ( Typ. 4.7nC )

* Low Crss ( Typ. 6.3pF )

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS compliant May 2007 UniFETTM tm Description These N-Channel e

FDD6N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FDD6N20 Datasheet (311.40 KB)

FDD6N20 Datasheet Preview — Preview of FDD6N20 PDF

Datasheet Details

Part number:

FDD6N20

Manufacturer:

Fairchild Semiconductor

File Size:

311.40 KB

Description:

Mosfet.

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FDD6N20 MOSFET Fairchild Semiconductor

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FDD6N20 Features

FDD6N20 General Description

Datasheet Details

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