FDD6N25 Datasheet | Fairchild Semiconductor

Features - RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A - Low Gate Charge (Typ. 4.5 n C) - Low Crss (Typ. 5 p F) - 100% Avalanche Tested Applications - LCD/LED/PDP TV - Consumer Appliances - Lighting - Uninterruptible Power Supply - AC-DC Power Supply May 2014 Description Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D-PAK Absolute Maximum Ratings TC = 25o C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG...