FDD6N20TM
FDD6N20TM is MOSFET manufactured by Fairchild Semiconductor.
Features
- RDS(on) = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A
- Low Gate Charge (Typ. 4.7 n C)
- Low Crss (Typ. 6.3 p F)
- 100% Avalanche Tested
- Ro HS pliant
Applications
- LCD/LED/PDP TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
November 2013
Description
Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS VGSS
IDM EAS IAR EAR dv/dt
Parameter
Drain to Source...
