FDD6N20 Datasheet | Fairchild Semiconductor

Features - RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A - Low gate charge ( Typ. 4.7n C ) - Low Crss ( Typ. 6.3p F ) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant May 2007 Uni FETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D-PAK FDD Series G D S I-PAK FDU Series MOSFET Maximum Ratings TC = 25o C unless otherwise noted- Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source...