FDD7N20

MOSFET

Fairchild Semiconductor

FDD7N20 Features

* RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A

* Low gate charge( Typ. 5nC )

* Low Crss ( Typ. 5pF )

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS compliant April 2007 UniFETTM tm Description These N-Channel en

FDD7N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse .

FDD7N20 Datasheet (292.22 KB)

FDD7N20 Datasheet Preview — Preview of FDD7N20 PDF

Datasheet Details

Part number:

FDD7N20

Manufacturer:

Fairchild Semiconductor

File Size:

292.22 KB

Description:

Mosfet.

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FDD7N20 MOSFET Fairchild Semiconductor

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FDD7N20 Features

FDD7N20 General Description

Datasheet Details

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Description:

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