FDD10N20LZTM Datasheet - VBsemi

FDD10N20LZTM, N-Channel 200V MOSFET

FDD10N20LZTM-VB FDD10N20LZTM-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V .

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Datasheet Details

Part number:

FDD10N20LZTM

Manufacturer:

VBsemi

File Size:

248.88 KB

Description:

N-Channel 200V MOSFET

Features

* Trench Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuou

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FDD10N20LZTM N-Channel 200V MOSFET VBsemi

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