Datasheet Specifications
- Part number
- FDD10N20LZTM
- Manufacturer
- VBsemi
- File Size
- 248.88 KB
- Datasheet
- FDD10N20LZTM-VBsemi.pdf
- Description
- N-Channel 200V MOSFET
Description
FDD10N20LZTM-VB FDD10N20LZTM-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V .
Features
* Trench Power MOSFETApplications
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM ContinuouFDD10N20LZTM Distributors
📁 Related Datasheet
📌 All Tags