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FDD10N20LZTM - N-Channel 200V MOSFET

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VBsemi

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FDD10N20LZTM N-Channel 200V MOSFET by VBsemi - Datasheet Preview — Datasheet preview – FDD10N20LZTM

Datasheet Details

Part number	FDD10N20LZTM
Manufacturer	VBsemi
File Size	248.88 KB
Description	N-Channel 200V MOSFET
Datasheet	FDD10N20LZTM Datasheet
Additional preview pages of the FDD10N20LZTM datasheet.

Product details

Features

Trench Power MOSFET.
175 °C Junction Temperature.
PWM Optimized.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

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Published: May 7, 2025 |