Datasheet Details
- Part number
- FDD10N20LZTM
- Manufacturer
- VBsemi
- File Size
- 248.88 KB
- Datasheet
- FDD10N20LZTM-VBsemi.pdf
- Description
- N-Channel 200V MOSFET
FDD10N20LZTM Description
FDD10N20LZTM-VB FDD10N20LZTM-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V .
FDD10N20LZTM Features
* Trench Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
FDD10N20LZTM Applications
* Primary Side Switch
G
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuou
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