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FDD10N20LZTM Datasheet - VBsemi

FDD10N20LZTM N-Channel 200V MOSFET

FDD10N20LZTM Features

* Trench Power MOSFET

* 175 °C Junction Temperature

* PWM Optimized

* 100 % Rg Tested

* Compliant to RoHS Directive 2002/95/EC APPLICATIONS

* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted

Datasheet Details

FDD10N20LZTM

VBsemi

248.88 KB

N-channel 200v mosfet.

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FDD10N20LZTM N-Channel 200V MOSFET VBsemi

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