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MOSFET – N-Channel, POWERTRENCH)
150 V, 14 A, 120 mW
FDD120AN15A0
Features
• RDS(on) = 101 mW (Typ.) @ VGS = 10 V, ID = 4 A • QG(tot) = 11.2 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
• Consumer Appliances • LED TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGS ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25°C, VGS = 10 V) Continuous (TC = 100°C, VGS = 10 V) Continuous (Tamb = 25°C, VGS = 10 V)
with RqJA = 52°C/W Pulsed
150
V
±20
V
A 14 9.7 2.
FDD120AN15A0 Datasheet
