FDD18N20LZ

N-Channel MOSFET

ON Semiconductor

FDD18N20LZ Features

* RDS(on) = 125 mW (Typ.) @ VGS = 10 V, ID = 8 A

* Low Gate Charge (Typ. 30 nC)

* Low CRSS (Typ. 25 pF)

* 100% Avalanche Tested

* Improved dv/dt Capability

* ESD Improved Capability

* These Device is Pb

* Free and is RoHS Compliant Applic

FDD18N20LZ General Description

UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on

*state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching pow.

FDD18N20LZ Datasheet (456.52 KB)