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FDD13AN06A0 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 60 V, 50 A, 13 mW FDD13AN06A0 .

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Features

* RDS(on) = 11.5 mW (Typ. ) @ VGS = 10 V, ID = 50 A
* QG(tot) = 22 nC (Typ. ) @ VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* This Device is Pb
* Free, Halide Free and is RoHS Compliant A

Applications

* Consumer Appliances
* LED TV
* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source

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