FDD107AN06LA0
FDD107AN06LA0 is N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor.
January 2004
N-Channel PowerTrench® MOSFET 60V, 10A, 107mΩ
Features
- rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A
- Qg(tot) = 4.2nC (Typ.), VGS = 5V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
Formerly developmental type 83524
Applications
- Motor / Body Load Control
- ABS Systems
- Powertrain Management
- Injection Systems
- DC-DC converters and Off-line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
GATE SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
Parameter
Drain...
