FDD10AN06A0
Overview
- r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A
- Qg(tot) = 28nC (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101 Formerly developmental type 82560
