FDD10AN06A0
FDD10AN06A0 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
August 2002
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
- r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A
- Qg(tot) = 28nC (Typ.), VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
Formerly developmental type 82560
Applications
- Motor / Body Load Control
- ABS Systems
- Powertrain Management
- Injection Systems
- DC-DC converters and Off-line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 12V and 24V systems
DRAIN (FLANGE) GATE SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to...
