FDD10AN06A0
FDD10AN06A0 is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, POWERTRENCH)
60 V, 50 A, 10.5 mW
Features
- RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A
- Qg(tot) = 28 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- Motor / Body Load Control
- ABS Systems
- Powertrain Management
- Injection Systems
- DC- DC Converters and Off- line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 12 V and 24 V Systems
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGS ID
Drain to Source Voltage
Gate to Source Voltage
Drain...
