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FDD10AN06A0 - N-Channel MOSFET

Key Features

  • RDS(on) = 9.4 mW (Typ. ), VGS = 10 V, ID = 50 A.
  • Qg(tot) = 28 nC (Typ. ), VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 60 V, 50 A, 10.5 mW FDD10AN06A0 Features • RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A • Qg(tot) = 28 nC (Typ.