FDD10AN06A0 Description
MOSFET N-Channel, POWERTRENCH) 60 V, 50 A, 10.5 mW FDD10AN06A0.
FDD10AN06A0 Key Features
- RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A
- Qg(tot) = 28 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb-Free, Halide Free and is RoHS pliant