Datasheet Summary
FDMS7660 N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
30 V, 2.8 mΩ
Features
- Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
April 2009
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either...