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FDMS7660 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A.
  • Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS7660 N-Channel PowerTrench® MOSFET FDMS7660 N-Channel PowerTrench® MOSFET 30 V, 2.8 mΩ Features „ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant April 2009 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.