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FDMS7660 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS7660 N-Channel PowerTrench® MOSFET FDMS7660 N-Channel PowerTrench® MOSFET 30 V, 2.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications „ IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switch „ DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S D D D D Power 56 D7 D8 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 42 144 25 150 128 78 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.6 (Note 1a) 50 °C/W Device Marking FDMS7660 Device FDMS7660 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation 1 FDMS7660 Rev.

Key Features

  • Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A.
  • Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter.

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