FDMS7660
Features
- Max r DS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
- Max r DS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced Package and Silicon bination for low r DS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
April 2009
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance.
Applications
- IMVP Vcore Switching for Notebook
- VRM Vcore Switching for Desktop and Server
- Oring FET / Load Switch
- DC-DC Conversion
Top
Bottom
Pin 1 S
D5 D6
4G 3S
Power 56
D7 D8
2S 1S
MOSFET...
