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FDMS7660 N-Channel MOSFET

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Description

FDMS7660 N-Channel PowerTrench® MOSFET FDMS7660 N-Channel PowerTrench® MOSFET 30 V, 2.8 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Features

* Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery. Provides Sch

Applications

* MSL1 robust package design
* 100% UIL tested

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