FDMS7660
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Key Features
- Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
- Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant April 2009
