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FDMS7660 N-Channel PowerTrench® MOSFET
FDMS7660
N-Channel PowerTrench® MOSFET
30 V, 2.8 mΩ
Features
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A Advanced Package and Silicon combination for low rDS(on) and
high efficiency
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
April 2009
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.