Datasheet Details
| Part number | FDMS86520 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 313.48 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86520_FairchildSemiconductor.pdf |
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Overview: FDMS86520 N-Channel PowerTrench® MOSFET FDMS86520 N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.
| Part number | FDMS86520 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 313.48 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86520_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications Primary DC-DC Switch Motor Bridge Switch Synchronous Rectifier Top Bottom Pin 1 S S S D S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S G (Note 1a) (Note 3) (Note 1a) D D Ratings 60 ±20 42 14 80 86 69 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.8 (Note 1a) 50 °C/W Device Marking FDMS86520 Device FDMS86520 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation 1 FDMS86520 Rev.
C3 www.fairchildsemi.com FDMS86520 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDS
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