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FDMS86520 N-Channel MOSFET

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Description

FDMS86520 N-Channel PowerTrench® MOSFET FDMS86520 N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.4 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Features

* Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A
* Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MS

Applications

* Primary DC-DC Switch
* Motor Bridge Switch
* Synchronous Rectifier Top Bottom Pin 1 S S S D S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source

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