FDMT800120DC MOSFET

Fairchild Semiconductor

Description

FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT800120DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120 V, 128 A, 4.2 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

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Datasheet Specifications

Part number: FDMT800120DC
Manufacturer: Fairchild Semiconductor
File Size: 310.17 KB
Datasheet: FDMT800120DC-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A
* Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* Low p

Applications

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectification
* RoHS Compliant
* DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual CoolTM 88 Bottom MOSFET Maximum Ratings TA = 25 °C

FDMT800120DC Distributors

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FDMT800120DC MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMT800120DC-like datasheet