FDMT800120DC Datasheet - Fairchild Semiconductor

FDMT800120DC MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient the.

FDMT800120DC Features

* Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A

* Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* Low p

FDMT800120DC Datasheet (310.17 KB)