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FDMT80080DC Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications „ MSL1 robust package design „ OringFET / Load Switching „ 100% UIL tested „ Synchronous Rectification „ RoHS Compliant „ DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual CoolTM 88 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.

Overview

FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 80 V, 254 A, 1.

Key Features

  • Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A.
  • Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • Low profile 8x8mm MLP package General.

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