FDMT80080DC Datasheet - Fairchild Semiconductor

FDMT80080DC, MOSFET

FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 80 V, 254 A, 1.35 mΩ F.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Features

* Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A
* Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* Low

Applications

* MSL1 robust package design
* OringFET / Load Switching
* 100% UIL tested
* Synchronous Rectification
* RoHS Compliant
* DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual CoolTM 88 Bottom MOSFET Maximum Ratings TA = 25 °C

FDMT80080DC-FairchildSemiconductor.pdf