FDMT80080DC Datasheet - Fairchild Semiconductor

MOSFET

FDMT80080DC Features

* Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A

* Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* Low

FDMT80080DC General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient the.

FDMT80080DC Datasheet (308.46 KB)

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Datasheet Details

Part number:

FDMT80080DC

Manufacturer:

Fairchild Semiconductor

File Size:

308.46 KB

Description:

Mosfet.
FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 80 V, 254 A, 1.35 mΩ F.

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FDMT80080DC MOSFET Fairchild Semiconductor

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FDMT80080DC Features

FDMT80080DC General Description

Datasheet Details

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