Datasheet Specifications
- Part number
- FDR6580
- Manufacturer
- Fairchild Semiconductor
- File Size
- 241.41 KB
- Datasheet
- FDR6580_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
FDR6580 April 1999 ADVANCE INFORMATION FDR6580 N-Chennal 2.5V Specified PowerTrenchTM MOSFET General .
Features
* 11 A, 20 V. RDS(ON) = 0.009 Ω @ VGS = 4.5 V RDS(ON) = 0.013 Ω @ VGS = 2.5 V. Low gate charge. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. ApplicApplications
* Load switch Motor driving Power Management D S D S 5 6 D G 4 3 2 1 7 8 SuperSOT -8 TM D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 20 (Note 1a) UFDR6580 Distributors
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