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FDR6678A N-Channel MOSFET

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Description

FDR6678A April 2000 PRELIMINARY FDR6678A 30V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Features

* 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5V RDS(ON) = 20 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* Fast switching, low gate charge

Applications

* DC/DC converter D S D S 5 6 4 3 2 1 SuperSOT -8 TM D D D G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units

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