FDR8305N - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDR8305N
Manufacturer	Fairchild Semiconductor
File Size	215.82 KB
Description	N-Channel MOSFET
Datasheet	FDR8305N_FairchildSemiconductor.pdf

FDR8305N Product details

Description

These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V.
Low gate charge (16.2nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.

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Published: Mar 30, 2005 |