FDR836P Datasheet, Mosfet, Fairchild Semiconductor

FDR836P Features

• Mosfet
• -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V
• High density cell design for extremely low RDS(ON). Small footprint (38%

PDF File Details

Part number:

FDR836P

Manufacturer:

Fairchild Semiconductor

File Size:

224.87kb

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📄 Datasheet

Description:

P-channel mosfet. SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density

FDR836P Application

• Applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are

TAGS

FDR836P

Fairchild Semiconductor

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