Datasheet4U Logo Datasheet4U.com

FDR836P

P-Channel MOSFET

FDR836P Features

* -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V

* High density cell design for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. D S

FDR836P General Description

SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are .

FDR836P Datasheet (224.87 KB)

Preview of FDR836P PDF

Datasheet Details

Part number:

FDR836P

Manufacturer:

Fairchild Semiconductor

File Size:

224.87 KB

Description:

P-channel mosfet.

📁 Related Datasheet

FDR8305N N-Channel MOSFET (Fairchild Semiconductor)

FDR8308P P-Channel MOSFET (Fairchild Semiconductor)

FDR8321L P-Channel MOSFET (Fairchild Semiconductor)

FDR838P P-Channel MOSFET (Fairchild Semiconductor)

FDR840P P-Channel MOSFET (Fairchild Semiconductor)

FDR842P P-Channel MOSFET (Fairchild Semiconductor)

FDR844P P-Channel MOSFET (Fairchild Semiconductor)

FDR8508P P-Channel MOSFET (Fairchild Semiconductor)

FDR8521L P-Channel MOSFET (Fairchild Semiconductor)

FDR856P P-Channel MOSFET (Fairchild Semiconductor)

TAGS

FDR836P P-Channel MOSFET Fairchild Semiconductor

Image Gallery

FDR836P Datasheet Preview Page 2 FDR836P Datasheet Preview Page 3

FDR836P Distributor