FDR836P P-Channel MOSFET

Fairchild Semiconductor

Description

FDR836P April 1999 FDR836P P-Channel 2.5V Specified MOSFET General .
SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDR836P
Manufacturer: Fairchild Semiconductor
File Size: 224.87 KB
Datasheet: FDR836P_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V
* High density cell design for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. D S

FDR836P Distributors

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FDR836P P-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDR836P-like datasheet