FDR838P P-Channel MOSFET

Fairchild Semiconductor

Description

FDR838P March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General .
These P-Channel 2.

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Datasheet Specifications

Part number: FDR838P
Manufacturer: Fairchild Semiconductor
File Size: 204.53 KB
Datasheet: FDR838P_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low

Applications

* Load switch Motor driving Power Management D S D S 5 6 G 4 3 2 1 7 8 SuperSOT -8 TM D D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter

FDR838P Distributors

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FDR838P P-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDR838P-like datasheet