Datasheet Details
- Part number
- FDR838P
- Manufacturer
- Fairchild Semiconductor
- File Size
- 204.53 KB
- Datasheet
- FDR838P_FairchildSemiconductor.pdf
- Description
- P-Channel MOSFET
FDR838P Description
FDR838P March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General .FDR838P Features
* -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); lowFDR838P Applications
* Load switch Motor driving Power Management D S D S 5 6 G 4 3 2 1 7 8 SuperSOT -8 TM D D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter
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