FDR8508P - P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDR8508P
Manufacturer	Fairchild Semiconductor
File Size	274.56 KB
Description	P-Channel MOSFET
Datasheet	FDR8508P_FairchildSemiconductor.pdf

FDR8508P Product details

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

-3.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10V RDS(ON) = 0.086Ω @ VGS = -4.5V. Low gate charge. (8nC typical). High performance trench technology for extremely low RDS(ON) High power and current handling capability.

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Published: Mar 30, 2005 |